symbol v ds v gs i dm i ar e ar t j , t stg symbol typ max 31 41 59 75 r q jl 16 24 t a =25c maximum junction-to-lead c steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r q ja c/w c/w absolute maximum ratings t a =25c unless otherwise noted vv 20 gate-source voltage drain-source voltage 30 i dsm maximum junction-to-ambient a steady-state power dissipation f t a =25c p dsm junction and storage temperature range t a =70c avalanche current b repetitive avalanche energy l=0.3mh b 30 a maximum units parameter pulsed drain current b 100 t a =70c continuous drain current f a 16 3.0 w 2.0 a 20 135 mj c -55 to 150 AO4714 30v n-channel mosfet product summary v ds (v) = 30v i d =20a (v gs = 10v) r ds(on) < 4.7m w (v gs = 10v) r ds(on) < 6.7m w (v gs = 4.5v) 100% uis tested 100% rg tested general description srfet tm AO4714 uses advanced trench technology with a monolithically integrated schottky diode to provide excellent r ds(on) ,and low gate charge. this device is suitable for use as a low side fet in smp s, load switching and general purpose applications. srfet tm soic-8 top view bottom view d d d d s s s g g ds srfet tm s oft r ecovery mos fet : integrated schottky diode alpha & omega semiconductor, ltd. www.aosmd.com
AO4714 symbol min typ max units bv dss 30 v v ds =30v, v gs =0v 0.1 t j =125c 20 i gss 0.1 m a v gs(th) gate threshold voltage 1.2 1.5 2.2 v i d(on) 100 a 3.9 4.7 t j =125c 5.9 7.3 5.4 6.7 m w g fs 90 s v sd 0.36 0.5 v i s 6 a c iss 3760 4512 pf c oss 682 pf c rss 314 pf r g 0.75 1.5 w q g (10v) 62 74 q g (4.5v) 29 35 nc q gs 12 nc q gd 12 nc t d(on) 9.5 ns t r 8.5 ns t d(off) 34 ns t f 9 ns t rr 18 27 ns q rr 22 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery time body diode reverse recovery charge i f =20a, di/dt=300a/ m s drain-source breakdown voltage on state drain current i d =1ma, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =20a reverse transfer capacitance i f =20a, di/dt=300a/ m s v ds =v gs i d =250 m a electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss zero gate voltage drain current ma v ds =0v, v gs = 20v gate-body leakage current r ds(on) static drain-source on-resistance forward transconductance diode forward voltage maximum body-diode + schottky continuous current input capacitance output capacitance dynamic parameters m w v gs =4.5v, i d =16a i s =1a,v gs =0v v ds =5v, i d =20a turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =0.75 w , r gen =3 w turn-off fall time turn-on delaytime total gate charge v gs =10v, v ds =15v, i d =20a gate drain charge v gs =0v, v ds =15v, f=1mhz switching parameters total gate charge gate source charge gate resistance v gs =0v, v ds =0v, f=1mhz a: the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. b: repetitive rating, pulse width limited by juncti on temperature t j(max) =150c. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a stil l air environment with t a =25c. the soa curve provides a single pulse rating. f. the power dissipation and current rating is base d on the t 10s junction to ambient thermal resistance rating. rev3: nov. 2010 alpha & omega semiconductor, ltd. www.aosmd.com
AO4714 typical electrical and thermal characteristics 0 25 50 75 100 125 150 175 200 0 1 2 3 4 5 v ds (volts) figure 1: on-region characteristics i d (a) 10v 4.5v v gs =3v 6v 4v 3.5v 7v 5v 0 5 10 15 20 25 30 1 1.5 2 2.5 3 3.5 4 v gs (volts) figure 2: transfer characteristics i d (a) 2 3 4 5 6 7 8 0 5 10 15 20 25 30 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m w ww w ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 0 30 60 90 120 150 180 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance i d =20a v gs =10v v gs =4.5v 2 4 6 8 10 2 4 6 8 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m w ww w ) 25c 125 v ds =5v v gs =4.5v v gs =10v i d =20a 25c 125c i d =16a alpha & omega semiconductor, ltd. www.aosmd.com
AO4714 typical electrical and thermal characteristics 0 2 4 6 8 10 0 20 40 60 80 100 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 2000 4000 6000 8000 10000 12000 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c rss 0.0 0.1 1.0 10.0 100.0 1000.0 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 10 m s 10s 1ms 0.1s dc r ds(on) limited t j(max) =150c t a =25c 100 m 1s v ds =15v i d =20a 0 10 20 30 40 50 60 70 80 90 100 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure10: single pulse power rating junction-to- ambient (note e) power (w) t j(max) =150c t a =25c 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal imp edance (note e) z q qq q ja normalized transient thermal resistance d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =41c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse alpha & omega semiconductor, ltd. www.aosmd.com
|
